Features: • Low on-resistance RDS(on)= 10mΩ typ.• 4V gate drive devices.• High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 30 V Continous Drain Current VGSS ±20 V Drain current I D 45 A Drain peak curren...
2SK2885_1376861: Features: • Low on-resistance RDS(on)= 10mΩ typ.• 4V gate drive devices.• High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltage VDS...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 30 | V |
Continous Drain Current | VGSS | ±20 | V |
Drain current | I D | 45 | A |
Drain peak current | I D(puls)* 1 | 180 | A |
Body to drain diode reverse drain current | IDR | 45 | A |
Channel dissipation | Pch* 2 | 75 | W |
Channel temperature | T ch | 150 | |
Storage temperature | T stg | -55 to +150 |