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2SK2869_1376849

Features: • Low on-resistance RDS = 0.033 Ω typ.• High speed switching• 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±20 V Drain current I D ...

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SeekIC No. : 004226364 Detail

2SK2869_1376849: Features: • Low on-resistance RDS = 0.033 Ω typ.• High speed switching• 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Rating Unit D...

2SK2869_1376849 Data Sheet

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Part Number:
2SK2869_1376849
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

•  Low on-resistance
    RDS = 0.033 Ω typ.
•  High speed switching
•  4V gate drive device can be driven from 5V source


Specifications

Item Symbol Rating Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±20 V
Drain current I D 20 A
Drain peak current I D(puls)* 1 80 A
Body to drain diode reverse drain current IDR 20 A
Avalanche current IAP* 3 20 A
Avalanche energy EAR* 3 34 mJ
Channel dissipation Pch* 2 30 W
Channel temperature T ch 150
Storage temperature T stg -55 to +150
Notes: 1. PW 10µs, duty cycle 1 %
            2. Value at Tc = 25°C
            3. Value at Tch = 25°C, Rg 50Ω


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