2SK2869(L)

      The 2SK2869(L) is designed as silicon N channel MOSFET with typical application of high speed power switching applications.
      2SK2869(L) has three features.The first one is that it would have low on-resistance which means Rds = 0.033 typ.The second one is that it would have high speed switching.The third one is that its 4 V gate drive device can be driven from 5 V source.That are the features.
      Some absolute maximum ratings of 2SK2869(L) (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current which would be 20 A.The fourth one is about its drain peak current which would be 80 A.The fifth one is about its body to drain diode reverse drain current which would be 20 A.The sixth one is about its avalanche current which would be 20 A.The seventh one is about its avalanche energy which would be 34 mJ.The eighth one is about its channel dissipation which would be 30 W.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.Something should be noted that about the drain peak current the condition would be PW <= 10 s, duty cycle <= 1 %.About the channel dissipation the value would be at Tc = 25°C.About the avalanche current and avalanche energy the value would be at Tch = 25°C, Rg >= 50 .
      Also there are some electrical characteristics (Ta = 25°C) about 2SK2869(L).The first one is about its drain to source breakdown voltage which would be min 60 V with condition of Id = 10 mA, Vgs = 0.The second one is about its gate to source breakdown voltage which would be min ±20 V with condition of Ig = ±100 A, Vds = 0.The third one is about its gate to source leak current which would be max ±10 A with condition of Vgs = ±16 V, Vds = 0.The fourth one is about its zero gate voltage drain current which would be max 10 A with condition of Vds = 60 V, Vgs = 0.The fifth one is about its gate to source cutoff voltage which would be from 1.5 to 2.5 V with condition of Id = 1 mA, Vds = 10 V.And so on.For more information please contact us.