Features: Low on-resistance RDS = 0.033 typ.High speed switching4V gate drive device can be driven from 5V sourceSpecifications Parameter Symbol Limits Unit Drain to source voltageGate to source voltageDrain currentDrain currentPower dissipationChannel temperatureStorage tempera...
2SK2869: Features: Low on-resistance RDS = 0.033 typ.High speed switching4V gate drive device can be driven from 5V sourceSpecifications Parameter Symbol Limits Unit Drain to source voltag...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Parameter |
Symbol |
Limits |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain current Power dissipation Channel temperature Storage temperature |
VDSS VGSS ID Idp* PD Tch Tstg |
60 |
V V A A W |