2SK2864

The 2SK2864 is designed as N-channel silicon MOSFET with typical applications of ultrahigh-speed switching applications.
2SK2864 has three features.Thr first one is that it would have low ON-resistance.The second one is that it would have ultrahigh-speed switching.The third one is that it would Enables simplified fabrication, high-density mounting,and miniaturization in end products due to the surface mountable package.That are all the features.
Some absolute maximum ratings of 2SK2864 at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 200 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current (DC) which would be 20 A.The fourth one is about its drain current (pulse) which would be 80 A with condition of PW<=10s, duty cycle<=1%.The fifth one is about its allowable power dissipation which would be 50 W.The sixth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
Also there are some important electrical characteristics at Ta = 25°C about 2SK2864.The first one is about its drain to source breakdown voltage which would be min 200V with condition of Id=1mA, Vgs=0.The second one is about its zero gate voltage drain current which would be max 100 A with condition of Vds=200V, Vgs=0.The third one is about its gate to source leakage current which would be max ±10 A with condition of Vgs=±16V, Vds=0.The fourth one is about its cutoff voltage which would be from 2.0 to 4.0V with condition of Vds=10V, Id=1mA.The fifth one is about its forward transfer admittance which would be min 6S and typ 10S with condition of Vds=10V, Id=10A.The sixth one is about its static drain to source on-state resistance which would be typ 90m and max 120m with condition of Id=10A, Vgs=10V.The seventh one is about its gate to source breakdown voltage which would be min ±20 V with condition of Ig=±100mA, Vds=0.And so on.For more information please contact us.