2SK2856

The 2SK2856 is a kind of field effect transistor. It is widely used in UHF band low noise amplifier applications. There are some features as follows: (1) low noise figure: NF=0.7 dB (f=1.5 GHz); (2) high gain: Ga=21.5 dB (f=1.5 GHz).

The following is the absolute maximum ratings of 2SK2856 (Ta=25): (1)gate-drain voltage, VGDO: -3 V; (2)gate-source voltage, VGSO: -3 V; (3)drain current, ID: 80 mA; (4)drain power dissipation, PD: 100 mW; (5)channel temperature, Tch: 125; (6)storage temperature range, Tstg: -55 to 125.

What comes next is the electrical characteristics of 2SK2856 (Ta=25): (1)gate leakage current, IGSS: -20 A at VDS=0, VGS=-2 V; (2)drain current, IDSS: 15 mA min, 40 mA typ and 80 mA max at VDS=2 V, VGS=0; (3)gate-source cut-off voltage, VGS(OFF): -0.2 V min, -0.8 V typ and -2 V max at VDS=2 V, ID=100A; (4)forward transfer admittance, |Yfs|: 55 mS typ at VDS=2 V, ID=10 mA, f=1 kHz; (5)noise figure, NF: 0.7 dB typ and 1.5 dB max at VDS=2 V, ID=10 mA, f=1.5 GHz; (6)associated gain, Ga: 18 dB min and 21.5 dB typ at VDS=2 V, ID=10 mA, f=1.5 GHz.