2SK2855

      The 2SK2855 is designed as silicon N-channel MOS type with typical applications of UHF band amplifier applicatuons for high frequency power amplifier of telecommunications equipment.
      Some absolute maximum ratings of 2SK2855 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 10 V.The second one is about its gate-source voltage which would be ±6 V.The third one is about its drain current which would be 1.0 A.The fourth one is about its drain power dissipation (Tc = 25°C) which would be 0.5 W.The fifth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.And this transistor is an electrostatic-sensitive device.Please handle with caution.
      Also there are some important electrical characteristics (Ta = 25°C) about 2SK2855.The first one is about its output power which would be min 31 dBmW with condition of Vds = 6V, f = 849MHz and Pi = 23dBmW.The second one is about its drain efficiency which would be min 55% with condition of Vds = 6V, f= 849MHz, Pi=23dBmW, Po= 31dBmW.The third one is about its drain-source breakdown voltage which would be min 10V with condition of Vgs= 0, Id= 1A.The fourth one is about its drain cut-off current which would be max 100 nA with condition of Vds= 6V, Vgs= 0.The fifth one is about its threshold voltage which would be min 1.0V and typ 1.4V and max 1.8V with condition of Vds= 6V, Id = 500A.The sixth one is about its gate-source leakage current which would be max ±100 nA with condition of Vgs= 6V, Vds= 0.And so on.For more information please contact us.