2SK2854

The 2SK2854 is a kind of field effect transistor. It is widely used in UHF band amplifier applications.

The following is absolute maximum ratings of 2SK2854 (Ta=25): (1)drain-source voltage, VDSS: 10 V; (2)gate-source voltage, VGSS: ±6 V; (3)drain current, ID: 0.5 A; (4)drain power dissipation, PD: 0.5 W; (5)channel temperature, Tch: 150; (6)storage temperature range, Tstg: -55 to 150.

What comes next is the electrical characteristics of 2SK2854 (Ta=25): (1)output power, PO: 23 dBmW min at VDS=6 V, f=849 MHz, Pi=13 dBmW; (2)drain efficiency, D: 40% min at VDS=6 V, f=849 MHz, Pi=13 dBmW, PO=23 dBmW; (3)drain-source breakdown voltage, V(BR)DSS: 10 V min at VGS=0, ID=1A; (4)drain cut-off current, IDSS: 100 nA at VDS=6 V, VGS=0; (5)threshold voltage, Vth: 1.0 V min, 1.4 V typ and 1.8 V max at VDS=6 V, ID=250A; (6)gate-source leakage current, IGSS: ±100 nA at VGS=6 V, VDS=0.