2SK2851

Features: SpecificationsDescription The 2SK2851 is designed as silicon N channel MOS FET with typical application of high speed power switching applications. 2SK2851 has three features.The first one is that it would have low on-resistance which means Rds(on) = 0.055W typ. (at VGS = 10 V, ID = 2.5 ...

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SeekIC No. : 004226351 Detail

2SK2851: Features: SpecificationsDescription The 2SK2851 is designed as silicon N channel MOS FET with typical application of high speed power switching applications. 2SK2851 has three features.The first one...

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Part Number:
2SK2851
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Description



Features:






Specifications






Description

      The 2SK2851 is designed as silicon N channel MOS FET with typical application of high speed power switching applications.
      2SK2851 has three features.The first one is that it would have low on-resistance which means Rds(on) = 0.055W typ. (at VGS = 10 V, ID = 2.5 A).The second one is that it would have 4V gate drive devices.The third one is that it would have large current capacitance with Id = 5 A.That are all the features.
      Some absolute maximum ratings of 2SK2851 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current which would be 5 A.The fourth one is about its drain peak current which would be 20 A with condition of PW<=10ms, duty cycle<=1 %.The fifth one is about its body to drain diode reverse drain current which would be 5 A.The sixth one is about its avalanche current which would be 5 A.The seventh one is about its avalanche energy which would be 2.14 mJ.The eighth one is about its channel dissipation which would be 0.9 W.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.Something should be noted that about its Channel dissipation the value should be at Ta = 25°C and about the avalanche current and avalanche energy the value should be at Tch = 25°C, Rg>=50 .
      Also there are some electrical characteristics (Ta = 25°C) about 2SK2851.The first one is about its drain to source breakdown voltage which would be min 60 V with condition of Id=10mA, Vgs= 0.The second one is about its gate to source breakdown voltage which would be min ±20 V with condition of Ig= ±100mA, Vds = 0.The third one is about its zero gate voltege drain current which would be max 10 A with condition of Vds= 60 V, Vgs= 0.The fourth one is about its gate to source leak current which would be max ±10 A with condition of Vgs= ±16V, Vds= 0.And so on.For more information please contact us.






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