2SK2850-01

      The 2SK2850-01 is designed as N-channel enhancement mode power MOSFET with typical application of switching applications.
      Some absolute maximum ratings of 2SK2850-01 (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 900V.The second one is about its drain to continuous drain current which would be ±6A.The third one is about its pulsed drain current which would be ±24A.The fourth one is about its gate-source voltage which would be ±30V.The fifth one is about its maximum acalanche energy which would be 277mJ.The sixth one is about its maximum power dissipation which would be 125W.The seventh one is about its operating temprrature which would be +150°C.The last one is about its storage temperature range which would be from -55 to +150°C.
      Also there are some important electrical characteristics at Tc = 25°C (unless otherwise specified) about 2SK2850-01.The first one is about its drain-source breakdown voltage which would be min 900V with condition of Id=1mA,Vgs=0V.The second one is about its gate threshold voltage which would be min 2.5V and typ 3.0V and max 3.5V with condition of Id=1mA,Vds=Vgs.The third one is about its zero gate voltage drain current which would be typ 10A and max 500A with condition of Tch=25°C and would be typ 0.2mA and max 1.0mA with condition of Tch=125°C.The fourth one is about its gate source leakage current which would be typ 10nA and max 100nA with condition of Vgs=±30V,Vds=0V.The fifth one is about its drain source on-state resistance which would be typ 1.87 and max 2.5 with condition of Id=3A,Vgs=10V.The sixth one is about its forward transcondutance which would be min 2.0S and typ 4.0S with condition of Id=3A,Vds=25V.The seventh one is about its input capacitance which would be typ 950 pF and max 1450 pF with condition of Vds=25V, Vgs=0V, f=1MHz.The eighth one is about its output capacitance which would be typ 140 pF and max 210 pF with condition of Vds=25V, Vgs=0V, f=1MHz.The ninth one is about its reverse transfer capacitance which would be typ 80 pF and max 120 pF with condition of Vds=25V, Vgs=0V, f=1MHz.And so on.For more information please contact us.