2SK2849-01L

Features: SpecificationsDescription The 2SK2849-01L is designed as N-channel enhancement mode power MOSFET with typical application of switching applications. Some absolute maximum ratings of 2SK2849-01L (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The fir...

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SeekIC No. : 004226349 Detail

2SK2849-01L: Features: SpecificationsDescription The 2SK2849-01L is designed as N-channel enhancement mode power MOSFET with typical application of switching applications. Some absolute maximum ratings of 2SK284...

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Part Number:
2SK2849-01L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Description



Features:






Specifications






Description

      The 2SK2849-01L is designed as N-channel enhancement mode power MOSFET with typical application of switching applications.
      Some absolute maximum ratings of 2SK2849-01L (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 200V.The second one is about its drain to gate voltage which would be 200V.The third one is about its continuous drain current which would be ±18A.The fourth one is about its pulsed drain current which would be ±72A.The fifth one is about its gate-source voltage which would be ±30V.The sixth one is about its max. power dissipation which would be 50W.The seventh one is about its operating temprrature which would be +150°C.The last one is about its storage temperature range which would be from -55 to +150°C.
      Also there are some important electrical characteristics at Tc = 25°C (unless otherwise specified) about 2SK2849-01L.The first one is about its drain-source breakdown voltage which would be min 200V with condition of Id=1mA,Vgs=0V.The second one is about its gate threshold voltage which would be min 2.5V and typ 3.0V and max 3.5V with condition of Id=1mA,Vds=Vgs.The third one is about its zero gate voltage drain current which would be typ 10A and max 500A with condition of Tch=25°C and would be typ 0.2mA and max 1.0mA with condition of Tch=125°C.The fourth one is about its gate source leakage current which would be typ 10nA and max 100nA with condition of Vgs=±30V,Vds=0V.The fifth one is about its drain source on-state resistance which would be typ 0.15 and max 0.18 with condition of Id=9A,Vgs=10V.The sixth one is about its forward transcondutance which would be min 4.0S and typ 9.0S with condition of Id=9A,Vds=25V.The seventh one is about its input capacitance which would be typ 1100 pF and max 1650 pF with condition of Vds=25V, Vgs=0V, f=1MHz.The eighth one is about its output capacitance which would be typ 220 pF and max 330 pF with condition of Vds=25V, Vgs=0V, f=1MHz.The ninth one is about its reverse transfer capacitance which would be typ 100 pF and max 150 pF with condition of Vds=25V, Vgs=0V, f=1MHz.And so on.For more information please contact us.






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