Application`Low drain−source ON resistance : RDS (ON) = 0.54 (typ.)`High forward transfer admittance : |Yfs| = 9.0 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Symbol Characteristics Rat...
2SK2843: Application`Low drain−source ON resistance : RDS (ON) = 0.54 (typ.)`High forward transfer admittance : |Yfs| = 9.0 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement ...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Symbol |
Characteristics |
Rating |
Unit | |
VDSS |
Drain−source voltage |
600 |
V | |
VDGR |
Drain−gate voltage (RGS = 20 k) |
600 |
V | |
VGSS |
Gate−source voltage |
±30 |
V | |
ID |
Drain current | DC (Note 1) |
10 |
A |
IDP |
Pulse (Note 1) |
40 |
A | |
PD |
Drain power dissipation (Tc = 25°C) |
45 |
W | |
EAS |
Single pulse avalanche energy (Note 2) |
363 |
mJ | |
IAR |
Avalanche current |
10 |
A | |
EAR |
Repetitive avalanche energy (Note 3) |
5.0 |
mJ | |
Tch |
Channel temperature |
150 |
°C | |
Tstg |
Storage temperature range |
-55 to +150 |
°C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature