2SK2843

Application`Low drain−source ON resistance : RDS (ON) = 0.54 (typ.)`High forward transfer admittance : |Yfs| = 9.0 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Symbol Characteristics Rat...

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SeekIC No. : 004226345 Detail

2SK2843: Application`Low drain−source ON resistance : RDS (ON) = 0.54 (typ.)`High forward transfer admittance : |Yfs| = 9.0 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement ...

floor Price/Ceiling Price

Part Number:
2SK2843
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Application

`Low drain−source ON resistance : RDS (ON) = 0.54 (typ.)
`High forward transfer admittance : |Yfs| = 9.0 S (typ.)
`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)
`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Symbol
Characteristics
Rating
Unit
VDSS
Drain−source voltage
600
V
VDGR
Drain−gate voltage (RGS = 20 k)
600
V
VGSS
Gate−source voltage
±30
V
ID
Drain current DC (Note 1)
10
A
IDP
Pulse (Note 1)
40
A
PD
Drain power dissipation (Tc = 25°C)
45
W
EAS
Single pulse avalanche energy (Note 2)
363
mJ
IAR
Avalanche current
10
A
EAR
Repetitive avalanche energy (Note 3)
5.0
mJ
Tch
Channel temperature
150
°C
Tstg
Storage temperature range
-55 to +150
°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature




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