2SK2836

      The 2SK2836 is designed as silicon N-channel MOS type (-MOSV) with typical applications of chopper regulator, DC-DC converter and motor drive applications and also high speed,high current switchong applications.
      2SK2836 has four features.The first one is that it would have low drain-source ON-resistance which means Rds (ON) = 6.4 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 0.85 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 620 V).The fourth one is that it would have enhancement mode which means Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings of 2SK2836 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 600 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 600 V.The third one is about its gate-source voltage which would be ±30 V.The fourth one is about its drain current which would be 1 A for DC and would be 2 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 2.5 W.The sixth one is about its single pulse avalanche energy which would be 56 mJ.The seventh one is about its avalanche current which would be 1 A.The eighth one is about its repetitive avalanche energy which would be 0.25 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SK2836 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.And also about its repetitive avalanche energy it should be noted about repetitive rating that pulse width limited by max. junction temperature.And about its single-pulse avalanche energy it should be noted that Vdd = 90 V,starting Tch = 25°C, L = 100 mH, Rg = 25 , Iar = 1 A.About its drain power dissipation it should be noted that it is mounted on ceramic substrate.After all this transistor is an electrostatic-sensitive device.Please handle with caution.