Features: SpecificationsDescription The 2SK2833-R is designed as N-channel enhancement mode power MOSFET with typical application of switching applications. Some absolute maximum ratings of 2SK2833-R (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first o...
2SK2833-R: Features: SpecificationsDescription The 2SK2833-R is designed as N-channel enhancement mode power MOSFET with typical application of switching applications. Some absolute maximum ratings of 2SK2833-...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
The 2SK2833-R is designed as N-channel enhancement mode power MOSFET with typical application of switching applications.
Some absolute maximum ratings of 2SK2833-R (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 120V.The second one is about its drain to gate voltage which would be 120V.The third one is about its continuous drain current which would be ±50A.The fourth one is about its pulsed drain current which would be ±200A.The fifth one is about its gate-source voltage which would be ±20V.The sixth one is about its max. power dissipation which would be 100W.The seventh one is about its operating temprrature which would be +150°C.The last one is about its storage temperature range which would be from -55 to +150°C.
Also there are some important electrical characteristics at Tc = 25°C (unless otherwise specified) about 2SK2833-R.The first one is about its drain-source breakdown voltage which would be min 120V with condition of Id=1mA,Vgs=0V.The second one is about its gate threshold voltage which would be min 1.0V and typ 1.5V and max 2.5V with condition of Id=1mA,Vds=Vgs.The third one is about its zero gate voltage drain current which would be typ 10A and max 500A with condition of Tch=25°C and would be typ 0.2mA and max 1.0mA with condition of Tch=125°C.The fourth one is about its gate source leakage current which would be typ 10nA and max 100nA with condition of Vgs=±20V,Vds=0V.The fifth one is about its drain source on-state resistance which would be typ 25m and max 45m with condition of Id=25A,Vgs=4V and would be typ 20m and max 30m with condition of Id=25A,Vgs=10V.The sixth one is about its forward transcondutance which would be min 25S and typ 50S with condition of Id=25A,Vds=25V.The seventh one is about its input capacitance which would be typ 5000 pF and max 7500 pF with condition of Vds=25V, Vgs=0V, f=1MHz.The eighth one is about its output capacitance which would be typ 920 pF and max 1380 pF with condition of Vds=25V, Vgs=0V, f=1MHz.The ninth one is about its reverse transfer capacitance which would be typ 500 pF and max 750 pF with condition of Vds=25V, Vgs=0V, f=1MHz.And so on.For more information please contact us.