2SK2828

      The 2SK2828 is designed as silicon N channel MOSFET with typical applications of high speed power switching applications.
      2SK2828 has six features.The first one is that it would have low on-resistance.The second one is that it would have high speed switching.The third one is that it would have low drive current.The fourth one is that it would have no secondary breakdown.The fifth one is that it would be suitable for switching regulator and DCDC converter.The last one is that it would have avalanche ratings.That are all the features.
      Some absolute maximum ratings of 2SK2828 (Ta = 25°C) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 700 V.The second one is about its gate to source voltage which would be ±30 V.The third one is about its drain current which would be 12 A.The fourth one is about its drain peak current which would be 48 A with condition of PW <= 10s, duty cycle <= 1 %.The fifth one is about its body-drain diode reverse drain current which would be 12 A.The sixth one is about its channel dissipation which would be 175 W.The seventh one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.
      Also there are some important electrical characteristics at Ta = 25°C about 2SK2828.The first one is about its drain to source breakdown voltage which would be min 700V with condition of Id=10mA, Vgs=0.The second one is about its gate to source breakdown voltage which would be min ±30 V with condition of Ig= ±100 A, Vds= 0.The third one is about its gate to source leak current which would be max ±10 A with condition of Vgs= ±25 V, Vds= 0.The fourth one is about its zero gate voltage drain current which would be max 100 A with condition of Vds= 560 V, Vgs= 0.The fifth one is about its gate to source cutoff voltage which would be min 2.0 and max 3.0 V with condition of Id= 1 mA, Vds= 10V.The sixth one is about its static drain to source on state resistance which would be typ 0.9 and max 1.2 m with condition of Id= 6 A, Vgs= 10V.The seventh one is about its forward transfer admittance which would be min 5.5 and typ 9.0 S with condition of Id= 6 A, Vds= 10 V.And so on.For more information please contact us.