2SK2826

      The 2SK2826 is designed as N-channel silicon power MOSFET for high current switching applications.
      2SK2826 has three features.The first one is that it would have super low on-state resistance which means Rds(on)1= 6.5 mW (MAX.) (Vgs= 10 V, Id= 35 A) and Rds(on)2 = 9.7 mW (MAX.) (Vgs= 4.0 V, Id= 35 A).The second one is that it would have low Ciss which means Ciss= 7200 pF (TYP.).The third one is that it would have built-in gate protection diode.That are all the features.
      Some absolute maximum ratings of 2SK2826 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be ±20 V for AC and would be +20,-10V for DC.The third one is about its drain current which would be ±70A for DC and would be ±280A for pulse with condition of PW <= 10 m s, Duty cycle <= 1%.The fourth one is about its channel temperature which would be 150 °C.The fifth one is about its storage temperature which would be from 55 to +150 °C.The sixth one is about its single avalanche current which would be 70 A.The last one is about its single avalanche energy which would be 490 mJ.
      Also there are some electrical characteristics (Ta = 25°C) about 2SK2826.The first one is about its drain to source on-state resistance which would be typ 5.5m and max 6.5m with condition of Vgs=10V, Id=35A and would be typ 7.0m and max 9.7 m with condition of Vgs=4.0V, Id=35A.The second one is about its gate to source cut-off voltage which would be min 1.0V,and typ 1.5V and 2.0V with condition of Vds=10V, Id=1mA.The third one is about its forward transfer admittance which would be min 20S and typ 94S with condition of Vds=10V, Id=35A.The fourth one is about its drain leakage current which would be max 10 A with condition of Vds= 60 V, Vgs= 0 V.The fifth one is about its gate to source leakage current which would be max ±10 A with condition of Vgs= ±20 V, Vds= 0 V.And so on.For more information please contact us.