Features: SpecificationsDescription The 2SK2802 is designed as silicon N channel MOSFET with typical applications of low frequency power switching applications. 2SK2802 has three features.The first one is that it would have low onresistance which means Rds(on)= 0.2 typ. (Vgs= 4 V, Id= 100 mA).The ...
2SK2802: Features: SpecificationsDescription The 2SK2802 is designed as silicon N channel MOSFET with typical applications of low frequency power switching applications. 2SK2802 has three features.The first ...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
The 2SK2802 is designed as silicon N channel MOSFET with typical applications of low frequency power switching applications.
2SK2802 has three features.The first one is that it would have low onresistance which means Rds(on)= 0.2 typ. (Vgs= 4 V, Id= 100 mA).The second one is that it would have 2.5V gate drive devices.The third one is that it would have small package which means MPAK.That are all the features.
Some absolute maximum ratings of 2SK2802 (Ta = 25°C) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 30 V.The second one is about its gate to source voltage which would be ±10 V.The third one is about its drain current which would be 0.5 A.The fourth one is about its drain peak current which would be 1.0 A with condition of PW <= 10s, duty cycle <= 1 %.The fifth one is about its channel dissipation which would be 150 mW.The sixth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.
Also there are some important electrical characteristics at Ta = 25°C about 2SK2802.The first one is about its drain to source breakdown voltage which would be min 3V with condition of Id=100A, Vgs=0.The second one is about its gate to source breakdown voltage which would be min ±10 V with condition of Ig= ±100 A, Vds= 0.The third one is about its gate to source leak current which would be max ±10 A with condition of Vgs= ±6.5 V, Vds= 0.The fourth one is about its zero gate voltage drain current which would be max 1.0 A with condition of Vds= 30 V, Vgs= 0.The fifth one is about its gate to source cutoff voltage which would be min 0.5 and max 1.5 V with condition of Id= 10 A, Vds= 5V.The sixth one is about its static drain to source on state resistance which would be typ 0.2 and max 0.28 with condition of Id= 100 mA, Vgs= 4V.The seventh one is about its forward transfer admittance which would be min 0.7 and typ 1.2 S with condition of Id= 250 mA, Vds= 10 V.And so on.For more information please contact us.