Features: • Low on-resistance RDS(on) = 0.12 typ.• 4V gate drive devices.• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 5 A Drain peak current ID(puls...
2SK2796L: Features: • Low on-resistance RDS(on) = 0.12 typ.• 4V gate drive devices.• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 ...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 5 | A |
Drain peak current | ID(pulse)Note1 | 20 | A |
Body-drain diode reverse drain current | IDR | 5 | A |
Avalanche current | IAP Note3 | 5 | A |
Avalanche energy | EAR Note3 | 2.14 | mJ |
Channel dissipation | Pch Note2 | 20 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |