2SK2789(TE24L,Q)

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max: 60W
Current - Continuous Drain (Id) @ 25° C: 27A
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Supplier Device Package: TO-220SM
Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V


Parameters:

Technical/Catalog Information	2SK2789(TE24L,Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	85 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 10V
Power - Max	60W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	TO-220FL
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2789 TE24L,Q 2SK2789TE24L,Q