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2SK2789(SM,Q)

MOSFET N-CH 100V 27A TO-220SM

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SeekIC No. : 003434066 Detail

2SK2789(SM,Q): MOSFET N-CH 100V 27A TO-220SM

2SK2789(SM,Q) Data Sheet

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Part Number:
2SK2789(SM,Q)
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 27A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 50nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Power - Max: 60W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max: 60W
Current - Continuous Drain (Id) @ 25° C: 27A
Packaging: Bulk
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Supplier Device Package: TO-220SM
Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V


Parameters:

Technical/Catalog Information2SK2789(SM,Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C27A
Rds On (Max) @ Id, Vgs85 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 10V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / Case2-10S1B
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2789 SM,Q
2SK2789SM,Q



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