Features: · Low on-resistance RDS(on) = 0.12W typ (VGS = 10 V, ID = 1 A)· Low drive current· High speed switching· 4V gate drive devices.Specifications Item Symbol Ratings Unit Drain to source voltage VDSX 60 V Gate to source voltage VGSS ±20 V Drain current ID 2 A Dra...
2SK2788: Features: · Low on-resistance RDS(on) = 0.12W typ (VGS = 10 V, ID = 1 A)· Low drive current· High speed switching· 4V gate drive devices.Specifications Item Symbol Ratings Unit Drain to s...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 2 | A |
Drain peak current | ID(pulse)Note1 | 4 | A |
Body to drain diode reverse drain current | IDR | 2 | A |
Channel dissipation | PchNote2 | 1 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |