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2SK2777(Q)

MOSFET N-CH 600V 6A TO220FL

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SeekIC No. : 003430649 Detail

2SK2777(Q): MOSFET N-CH 600V 6A TO220FL

2SK2777(Q) Data Sheet

floor Price/Ceiling Price

US $ 1.3~1.3 / Piece | Get Latest Price
Part Number:
2SK2777(Q)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~150
  • Unit Price
  • $1.3
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 600V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 30nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 10V
Power - Max: 65W Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab Supplier Device Package: TO-220FL    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 6A
Input Capacitance (Ciss) @ Vds: 1300pF @ 10V
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Mounting Type: Through Hole
Packaging: Bulk
Power - Max: 65W
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3, Short Tab
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
Supplier Device Package: TO-220FL


Parameters:

Technical/Catalog Information2SK2777(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1.25 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 10V
Power - Max65W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / Case2-10S1B
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2777 Q
2SK2777Q



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