2SK2777

The 2SK2777 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=0.9 (typ); (2)high forward transfer admittance: |Yfs|=5.5 S (typ); (3)low leakage current: IDSS=100A (max) (VDS=600 V); (4)enhancement-mode: Vth=2.0 to 4.0 V (VDS=10 V, ID=1 mA).

What comes next is the maximum ratings of 2SK2777 (Ta=25): (1)drain-source voltage, VDSS: 600 V; (2)drain-gate voltage (RGS=20 k), VDGR: 600 V; (3)gate-source voltage, VGSS: ±30 V; (4)drain current, ID: 6 A when DC and 24 A when pulse; (5)drain power dissipation (Tc=25), PD: 65 W; (6)single pulse avalanche energy, EAS: 345 mJ; (7)avalanche current, IAR: 6 A; (8)repetitive avalanche energy, EAR: 6.5 mJ; (9)channel temperature, Tch: 150; (10)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SK2777 (Ta=25): (1)gate leakage current, IGSS: ±10 A at VGS=±25 V, VDS=0 V; (2)drain cut-off current, IDSS: 100A max at VDS=600 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 600 V min at ID=10 mA, VGS=0 V; (4)gate-source breakdown voltage, V(BR)GSS: ±30 V min at IG=±10 A, VDS=0 V; (5)gate threshold voltage, Vth: 2.0 V min and 4.0 V max at VDS=10 V, ID=1 mA; (6)drain-source ON resistance, RDS(ON): 0.9 typ and 1.25 max at ID=4 A, VGS=10 V; (7)forward transfer admittance, |Yfs|: 2.0 S min and 5.5 S typ at VDS=10 V, ID=3 A; (8)input capacitance, Ciss: 1300 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)reverse transfer capacitance, Crss: 130 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (10)output capacitance, Coss: 400 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.