2SK2749

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 55nC @ 10V
Power - Max: 150W
Drain to Source Voltage (Vdss): 900V
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 1500pF @ 25V
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V


Features:






Specifications






Description

      The 2SK2749 is designed as silicon N-channel MOS type (-MOSIII) with typical applications of chopper regulator, DC-DC converter and motor drive applications.
      2SK2749 has four features.The first one is that it would have low drain-source ON-resistance which means Rds (ON) = 1.6 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 5.0 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 720 V).The fourth one is that it would have enhancement mode which means Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings of 2SK2749 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 900 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 900 V.The third one is about its gate-source voltage which would be ±30 V.The fourth one is about its drain current which would be 7 A for DC and would be 21 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 150 W.The sixth one is about its single pulse avalanche energy which would be 682 mJ.The seventh one is about its avalanche current which would be 7 A.The eighth one is about its repetitive avalanche energy which would be 15 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SK2749 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And about its single-pulse avalanche energy it should be noted that Vdd = 90 V,Tch = 25°C(initial), L = 25.5 mH, Rg = 25 , Iar = 7 A.About its repetitive avalanche energy it should be noted that repetitive rating: pulse width limited by maximum channel temperature.After all this transistor is an electrostatic-sensitive device.Please handle with caution.

Parameters:

Technical/Catalog Information	2SK2749
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	2 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2749 2SK2749