2SK2740

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 7A
Mounting Type: Through Hole
Power - Max: 30W
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
Supplier Device Package: TO-220FN
Input Capacitance (Ciss) @ Vds: 1050pF @ 10V


Features:

1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V_GSS) guaranteed to be ±30V.
5) Easily designed drive circuits.
6) Easy to parallel


Specifications

Item		Symbol	Rating	Unit
Drain to Source Voltage		VDSS	600	V
Gate to Source Voltage		VGSS	±30	V
Drain Current	Continuous	ID	7	A
	Pulsed	IDP*	28	A
Reverse drain current	Continuous	IDR	7	A
	Pulsed	IDRP*	28	A
Channel temperature (TC=25 )		PD	30	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	-55to+150	°C

*Pw10s,Duty cycle1%


Parameters:

Technical/Catalog Information	2SK2740
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	1050pF @ 10V
Power - Max	30W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220FN-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2740 2SK2740