Features: ` Low on-resistance RDS = 15 m typ` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX 60 V Gate to source voltage VGSS ±20 V Drain current ID 40 A Drain peak current ID...
2SK2738: Features: ` Low on-resistance RDS = 15 m typ` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX ...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 40 | A |
Drain peak current | ID(pulse)*1 | 160 | A |
Body to drain diode reverse drain current | IDR | 40 | A |
Avalanche current | IAP*3 | 40 | A |
Avalanche Energy | EAR*3 | 137 | mJ |
Channel dissipation | Pch*2 | 30 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |