Features: · Low on-resistance RDS(on) = 20 mW typ. (VGS = 10V, ID = 15 A)· 4V gate drive devices.· High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX 30 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ...
2SK2736: Features: · Low on-resistance RDS(on) = 20 mW typ. (VGS = 10V, ID = 15 A)· 4V gate drive devices.· High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDS...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 30 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 30 | A |
Drain peak current | ID(pulse)*1 | 120 | A |
Body to drain diode reverse drain current | IDR | 30 | A |
Channel dissipation | Pch*2 | 25 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |