Features: ` Low on-resistance RDS = 20 m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Rating Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current ID 20 ...
2SK2735: Features: ` Low on-resistance RDS = 20 m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Rating Unit Drain to Source Voltag...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
` Low on-resistance
RDS = 20 m typ.
` High speed switching
` 4V gate drive device can be driven from 5V source
Item |
Symbol |
Rating |
Unit |
Drain to Source Voltage |
VDSS |
30 |
V |
Gate to Source Voltage |
VGSS |
±20 |
V |
Drain Current |
ID |
20 |
A |
Drain peak Current |
ID(pulse)*1 |
80 |
A |
Body to drain diode reverse drain current |
IDR |
20 |
A |
Channel dissipation |
Pch*2 |
20 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |