2SK2713

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 5A
Mounting Type: Through Hole
Power - Max: 30W
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 4V @ 1mA
Drain to Source Voltage (Vdss): 450V
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Supplier Device Package: TO-220FN


Features:

· Low on-resistance.
· Fast switching speed.
· Wide SOA (safe operating area).
· Gate-source voltage (V_GSS) guaranteed to be ±30V.
· Easily designed drive circuits.
· Easy to parallel.


Specifications

Parameter		Symbol	Limits	Unit
Drain-source voltage		VDSS	450	V
Gate-source voltage		VGSS	±30	V
Drain current	Continuous	ID	5	A
	Pulsed	IDP(1)	20	A
Reverse drain current	Continuous	IDR	5	A
	Pulsed	IDRP(1)	20	A
Total power dissipation(TC=25)		PD	30	W
Channel temperature		Tch	150
Storage temperature		Tstg	-55~+150

(1)P_W10S,Duty cycle1%


Parameters:

Technical/Catalog Information	2SK2713
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	450V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	30W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220FN-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2713 2SK2713