2SK2710

      The 2SK2710 is designed as N-channel silicon MOSFET.
      Some absolute maximum ratings of 2SK2710 at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 600 V.The second one is about its gate to source voltage which would be ±30 V.The third one is about its drain current (DC) which would be ±12 A.The fourth one is about its drain current (pulse) which would be ±48 A with condition of PW<=10ms, duty cycle <= 1%.The fifth one is about its maximum power dissipation which would be 85 W.The sixth one is about its single avalanche energy which would be 400 mJ.The seventh one is about its single avalanche current which would be 12 A.The eighth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
      Also there are some important electrical characteristics at Ta = 25°C about 2SK2710.The first one is about its drain to source breakdown voltage which would be min 600V with condition of Id=0.1mA, Vgs=0.The second one is about its gate to source leakage current which would be max ±100 A with condition of Vgs=±30V, Vds=0.The third one is about its zero gate voltage drain current which would be max 100 A with condition of Vds= 600V, Vgs= 0V.The fourth one is about its gate threshold voltage which would be min 2.0V and typ 3.0V and max 4.0V with condition of Vds= 10V, Id= 1mA.The fifth one is about its common source forward transconductance which would be min 7.5S and typ 11S with condition of Vds= 20V, Id= 6A.The sixth one is about its static drain source on state resistance which would be typ 0.42 and max 0.55 with condition of Vgs= 10V, Id= 6A.The seventh one is about its input capacitance which would be typ 1900 pF with condition of Vds=10V, f=1MHz and Vgs=0V.The eighth one is about its output capacitance which would be typ 410 pF with condition of Vds=10V, f=1MHz and Vgs=0V.And so on.For more information please contact us.