2SK2699

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 58nC @ 10V
Power - Max: 150W
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 2600pF @ 10V
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V


Parameters:

Technical/Catalog Information	2SK2699
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	650 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2699 2SK2699