2SK2682LS

The 2SK2682LS is designed as N-channel silicon MOSFET with typical applications of ultrahigh speed switching applications.
2SK2682LS has three features.Thr first one is that it would have low ON-resistance.The second one is that it would have high speed diode.The third one is it would have micaless package facilitating mounting.That are all the features.
Some absolute maximum ratings of 2SK2682LS at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 250 V.The second one is about its gate to source voltage which would be ±30 V.The third one is about its drain current (DC) which would be 13 A.The fourth one is about its drain current (pulse) which would be 52 A with condition of PW<=10ms, duty cycle<=1%.The fifth one is about its allowable power dissipation which would be 35 W with condition of Tc=25°C.The sixth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
Also there are some important electrical characteristics at Ta = 25°C about 2SK2682LS.The first one is about its drain to source breakdown voltage which would be min 250V with condition of Id=1mA, Vgs=0.The second one is about its zero gate voltage drain current which would be max 1.0 mA with condition of Vds=250V, Vgs=0.The third one is about its gate to source leakage current which would be max ±10 A with condition of Vgs=±25V, Vds=0.The fourth one is about its cutoff voltage which would be from 2.0 to 3.0V with condition of Vds=10V, Id=1mA.The fifth one is about its forward transfer admittance which would be min 6S and typ 10S with condition of Vds=10V, Id=6A.The sixth one is about its static drain to source on-state resistance which would be typ 200m and max 270m with condition of Id=6A, Vgs=10V.The seventh one is about its input capacitance which would be typ 1290 pF with condition of Vds=20V, f=1MHz.The eighth one is about its output capacitance which would be typ 300 pF with condition of Vds=20V, f=1MHz.And so on.For more information please contact us.