2SK2625ALS

MOSFET N-CH 600V 5A TO-220FI

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SeekIC No. : 003433793 Detail

2SK2625ALS: MOSFET N-CH 600V 5A TO-220FI

floor Price/Ceiling Price

Part Number:
2SK2625ALS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 600V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 15V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 20nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 700pF @ 20V
Power - Max: 2W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FI(LS)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5A
Power - Max: 2W
Input Capacitance (Ciss) @ Vds: 700pF @ 20V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220FI(LS)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 15V


Pinout






Specifications

Absolute maximum ratings
VDSS [V] 600
VGSS [V] 30
ID [A] 5
PD [W] 30
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=2.5
1.5
*15V
VGS(off) min [V] 3.5
VGS(off) max [V] 5.5
|yfs| typ [S] 3
Ciss typ [pF] 700
Qg typ [nC] 20





Description

The 2SK2625ALS is designed as N-channel silicon MOSFET with typical applications of general purpose switching device applications.
2SK2625ALS has three features.Thr first one is that it would have low ON-resistance.The second one is that it would have low Qg.The third one is it would have ultrahigh speed switching.That are all the features.
Some absolute maximum ratings of 2SK2625ALS at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 600 V.The second one is about its gate to source voltage which would be ±30 V.The third one is about its drain current (DC) which would be 5 A.The fourth one is about its drain current (pulse) which would be 16 A with condition of PW<=10ms, duty cycle<=1%.The fifth one is about its allowable power dissipation which would be 30 W with condition of Tc=25°C.The sixth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
Also there are some important electrical characteristics at Ta = 25°C about 2SK2625ALS.The first one is about its drain to source breakdown voltage which would be min 600V with condition of Id=1mA, Vgs=0.The second one is about its zero gate voltage drain current which would be max 1.0 mA with condition of Vds=600V, Vgs=0.The third one is about its gate to source leakage current which would be max ±100 nA with condition of Vgs=±30V, Vds=0.The fourth one is about its cutoff voltage which would be from 3.5 to 5.5V with condition of Vds=10V, Id=1mA.The fifth one is about its forward transfer admittance which would be min 1.5S and typ 3.0S with condition of Vds=10V, Id=2.5A.The sixth one is about its static drain to source on-state resistance which would be typ 1.5 and max 2.0 with condition of Id=2.5A, Vgs=15V.The seventh one is about its input capacitance which would be typ 700 pF with condition of Vds=20V, f=1MHz.The eighth one is about its output capacitance which would be typ 220 pF with condition of Vds=20V, f=1MHz.And so on.For more information please contact us.








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