2SK2623

The 2SK2623 is designed as N-channel silicon MOSFET with typical applications of ultrahigh speed switching applications.
2SK2623 has two features.Thr first one is that it would have low ON-resistance.The second one is that it would have low Qg.That are all the features.
Some absolute maximum ratings at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 600 V.The second one is about its gate to source voltage which would be ±30 V.The third one is about its drain current (DC) which would be 1.5 A.The fourth one is about its drain current (pulse) which would be 6 A with condition of PW<=10ms, duty cycle<=1%.The fifth one is about its allowable power dissipation which would be 30 W with condition of Tc=25°C.The sixth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
Also there are some important electrical characteristics at Ta = 25°C about 2SK2623.The first one is about its drain to source breakdown voltage which would be min 600V with condition of Id=1mA, Vgs=0.The second one is about its zero gate voltage drain current which would be max 1.0 mA with condition of Vds=600V, Vgs=0.The third one is about its gate to source leakage current which would be max ±100 nA with condition of Vgs=±30V, Vds=0.The fourth one is about its cutoff voltage which would be from 3.5 to 5.5V with condition of Vds=10V, Id=1mA.The fifth one is about its forward transfer admittance which would be min 0.5S and typ 1.0S with condition of Vds=10V, Id=0.8A.The sixth one is about its static drain to source on-state resistance which would be typ 4.2 and max 5.5 with condition of Id=0.8A, Vgs=15V.The seventh one is about its input capacitance which would be typ 300 pF with condition of Vds=20V, f=1MHz.The eighth one is about its output capacitance which would be typ 90 pF with condition of Vds=20V, f=1MHz.And so on.For more information please contact us.