2SK2615

      The 2SK2615 is designed as silicon N-channel MOS type (L2--MOSIII) with typical applications of DC-DC converter, relay drive and motor drive applications and also high speed, high current switching applications.
      2SK2615 has four features.The first one is that it would have low drain-source ON-resistance which means Rds (ON) = 0.23 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 2.0 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 60 V).The fourth one is that it would have enhancement mode which means Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings of 2SK2615 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 60 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 60 V.The third one is about its gate-source voltage which would be ±20 V.The fourth one is about its drain current which would be 2 A for DC and would be 6 A for pulse.The fifth one is about its drain power dissipation (Ta = 25°C) which would be 0.5 W.The sixth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.And also some important electrical characteristics about it.For example its gate leakage current which would be max ±10 A with condition of Vgs=±16V, Vds=0V.And its drain cutoff current would be max 100 A with condition of Vds=60V, Vgs=0V.And its drain-source breakdown voltage would be min 60 V with condition of Id=60V, Vgs=0V.And so on.For more information please contact us.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SK2615 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current / voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And this transistor is an electrostatic-sensitive device.Please handle with caution.