2SK2614

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25° C: 20A
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Power - Max: 40W
Packaging: Bulk
Vgs(th) (Max) @ Id: 2V @ 1mA
Input Capacitance (Ciss) @ Vds: 900pF @ 10V
Manufacturer: Toshiba
Supplier Device Package: PW-MOLD
Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V


Features:






Specifications






Description

      The 2SK2614 is designed as silicon N-channel MOS type (L2--MOSV) with typical applications of chopper regulator, DC-DC converter and motor drive applications.
      2SK2614 has five features.The first one is that it would have 4 V gate drive.The second one is that it would have low drain-source ON-resistance which means Rds (ON) = 0.032 (typ.).The third one is that it would have high forward transfer admittance which means |Yfs| = 13 S (typ.).The fourth one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 50 V).The fifth one is that it would have enhancement mode which means Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings of 2SK2614 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 50 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 50 V.The third one is about its gate-source voltage which would be ±20 V.The fourth one is about its drain current which would be 20 A for DC and would be 50 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 40 W.The sixth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.And there are some important electrical characteristics (Ta = 25°C) about it.For example its gate leakage current would be max ±10 A with condition of Vgs = ±16 V, Vds = 0 V.And its drain cutoff current would be max 100 A with condition of Vds = 50 V, Vgs = 0 V.And also its drain-source breakdown voltage would be min 50 V with condition of Id = 10 mA, Vgs = 0 V.And so on.For more information please contact us.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SK2614 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.After all this transistor is an electrostatic-sensitive device.Please handle with caution.

Parameters:

Technical/Catalog Information	2SK2614
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	46 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	900pF @ 10V
Power - Max	40W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	*
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2614 2SK2614