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2SK2611

Application` Low drain−source ON resistance : RDS (ON) = 1.1 (typ.)` High forward transfer admittance : |Yfs| = 7.0 S (typ.)` Low leakage current : IDSS = 100 A (max) (VDS = 720 V)` Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol...

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2SK2611: Application` Low drain−source ON resistance : RDS (ON) = 1.1 (typ.)` High forward transfer admittance : |Yfs| = 7.0 S (typ.)` Low leakage current : IDSS = 100 A (max) (VDS = 720 V)` Enhanceme...

2SK2611 Data Sheet

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Part Number:
2SK2611
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Application

` Low drain−source ON resistance : RDS (ON) = 1.1 (typ.)
` High forward transfer admittance : |Yfs| = 7.0 S (typ.)
` Low leakage current : IDSS = 100 A (max) (VDS = 720 V)
` Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 900 V
Drain−gate voltage (RGS = 20 k) VDGR 900 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 9 A
Drain current Pulse (Note 1) IDP 27 A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2)		 EAS 663 mJ
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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