2SK2610

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 150W
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Drain to Source Voltage (Vdss): 900V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)


Application

`Low drain−source ON resistance : RDS (ON) = 2.3 (typ.)
`High forward transfer admittance : |Yfs|= 4.4 S (typ.)
`Low leakage current : IDSS = 100 A (max) (VDS = 720 V)
`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Parameter		Symbol	Rating	Unit
Drain−source voltage		VDSS	900	V
Drain−gate voltage (RGS = 20 k)		VDGR	900	V
Gate−source voltage		VGSS	±30	V
Drain current	DC (Note 1)	ID	5	A
	Pulse (Note 1)	IDP	15
Drain power dissipation (Tc = 25°C)		PD	150	W
Single pulse avalanche energy (Note 2)		EAD	595	mJ
Avalanche current		IAR	5	A
Repetitive avalanche energy (Note 3)		EAR	15	mJ
Channel temperature		TCH	150
Storage temperature		TSTG	-55 to +150

Parameters:

Technical/Catalog Information	2SK2610
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2610 2SK2610