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2SK2608

Features: `Low drain−source ON resistance : RDS (ON) = 3.73 (typ.)`High forward transfer admittance : |Yfs|= 2.6 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 720 V)`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating ...

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SeekIC No. : 004226216 Detail

2SK2608: Features: `Low drain−source ON resistance : RDS (ON) = 3.73 (typ.)`High forward transfer admittance : |Yfs|= 2.6 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 720 V)`Enhancement mo...

2SK2608 Data Sheet

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Part Number:
2SK2608
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low drain−source ON resistance : RDS (ON) = 3.73 (typ.)
`High forward transfer admittance : |Yfs|= 2.6 S (typ.)
`Low leakage current : IDSS = 100 A (max) (VDS = 720 V)
`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
900
V
Drain−gate voltage (RGS = 20 k)
VDGR
900
V
Gate−source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
3
A
Pulse (Note 1)
IDP
9
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy (Note 2)
EAS
295
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 3)
EAR
10.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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