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2SK2607

MOSFET N-CH 800V 9A TO-3PN

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SeekIC No. : 003433844 Detail

2SK2607: MOSFET N-CH 800V 9A TO-3PN

2SK2607 Data Sheet

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Part Number:
2SK2607
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 800V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 68nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2160pF @ 25V
Power - Max: 150W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 9A
Gate Charge (Qg) @ Vgs: 68nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 150W
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
Supplier Device Package: TO-3P(N)
Input Capacitance (Ciss) @ Vds: 2160pF @ 25V


Parameters:

Technical/Catalog Information2SK2607
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 2160pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs68nC @ 10V
Package / Case2-16C1B (TO-247 N)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2SK2607
2SK2607



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