2SK2606

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Gate Charge (Qg) @ Vgs: 68nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 85W
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
Supplier Device Package: TO-3P(N)IS
Input Capacitance (Ciss) @ Vds: 2160pF @ 25V


Features:






Specifications






Description

      The 2SK2606 is designed as silicon N-channel MOS type (-MOSIII) with typical applications of DC-DC converter, relay drive and motor drive applications.
      2SK2606 has four features.The first one is that it would have low drain-source ON-resistance which means Rds (ON) = 1.0 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 7.0 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 640 V).The fourth one is that it would have enhancement mode which means Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings of 2SK2606 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 800 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 800 V.The third one is about its gate-source voltage which would be ±30 V.The fourth one is about its drain current which would be 8 A for DC and would be 24 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 85 W.The sixth one is about its single pulse avalanche energy which would be 883 mJ.The seventh one is about its avalanche current which would be 8 A.The eighth one is about its repetitive avalanche energy which would be 8.5 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/ current/ voltage and the significant change in temperature, etc.) may cause 2SK2606 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And about its single-pulse avalanche energy it should be noted that Vdd = 90 V,Tch = 25°C(initial), L = 25.0 mH, Rg = 25 , Iar = 8 A.About its repetitive avalanche energy it should be noted that repetitive rating: pulse width limited by maximum channel temperature.After all this transistor is an electrostatic-sensitive device.Please handle with caution.

Parameters:

Technical/Catalog Information	2SK2606
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2160pF @ 25V
Power - Max	85W
Packaging	Tube
Gate Charge (Qg) @ Vgs	68nC @ 10V
Package / Case	2-16F1B
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2606 2SK2606