MOSFET N-CH 600V 6A TO-3PN
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Series: | - | Manufacturer: | Toshiba | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 600V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 6A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 3A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 1mA | Gate Charge (Qg) @ Vgs: | 30nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1300pF @ 10V | ||
Power - Max: | 125W | Mounting Type: | Through Hole | ||
Package / Case: | TO-3P-3, SC-65-3 | Supplier Device Package: | TO-3P(N) |
Technical/Catalog Information | 2SK2602 |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 1300pF @ 10V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 30nC @ 10V |
Package / Case | 2-16C1B (TO-247 N) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2SK2602 2SK2602 |