2SK2597

Features: SpecificationsDescription The 2SK2597 is designed as N-channel silicon power MOSFET for base station of 900 MHz band cellular phone power amplification. 2SK2597 has seven features.The first one is that it would have high output and high gain which means Po= 100 W, Gl= 13 dB (TYP.) (f = 9...

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SeekIC No. : 004226210 Detail

2SK2597: Features: SpecificationsDescription The 2SK2597 is designed as N-channel silicon power MOSFET for base station of 900 MHz band cellular phone power amplification. 2SK2597 has seven features.The firs...

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Part Number:
2SK2597
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:






Specifications






Description

      The 2SK2597 is designed as N-channel silicon power MOSFET for base station of 900 MHz band cellular phone power amplification.
      2SK2597 has seven features.The first one is that it would have high output and high gain which means Po= 100 W, Gl= 13 dB (TYP.) (f = 900 MHz) and Po= 90 W, Gl= 12 dB (TYP.) (f = 960 MHz).The second one is that it would have low intermodulation distortion.The third one is that it would covers all base station frequencies such as 800-MHz PDC and GSM.The fourth one is that it would have high-reliability gold electrodes.The fifth one is that it would have hermetic sealed package.The sixth one is that it would have internal matching circuit.The seventh one is that it would have push-pull structure.That are all the features.
      Some absolute maximum ratings of 2SK2597 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be 7 V.The third one is about its drain current (DC) which would be 15 A.The fourth one is about its total power dissipation which would be 290 W.The fifth one is about its thermal resistance which would be 0.6 °C/W.The sixth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.Also there are some electrical characteristics (Ta = 25°C) about it.For example its gate leakage current would be max 1 A with condition of Vgs= 7 V.And its cut-off voltage would be min 1.5V and max 4V with condition of Vds= 5 V, Id= 50 mA.And its drain current which would be max 2mA with condition of Vds= 60 V.And so on.For more information please contact us.
      Notes on Handling.2SK2597 internally uses beryllie porcelain (beryllium oxide). If powder or vapor of beryllium oxide enters your respiratory organs, you will have a difficulty in breathing, which is dangerous. Therefore, do no disassemble or chemically process the product.Be sure to abolish the product separately from general industrial wastes or garbage.






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