Features: • Low onresistance RDS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V soueceApplication·High speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX 60 V Gate to source voltage VGSS ...
2SK2586: Features: • Low onresistance RDS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V soueceApplication·High speed power switchingSpecifications ...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID** | 60 | A |
Drain peak current | ID(pulse)* | 240 | A |
Bodydrain diode reverse drain current | IDR** | 60 | A |
Avalanche current | IAP*** | 45 | A |
Avalanche energy | EAR*** | 174 | mJ |
Channel dissipation | Pch** | 125 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |