Features: ` Low on-resistance RDS(on) = 0. 8typ. (VGS = 4 V, ID = 100 mA)` 2.5V gate drive devices.` Small package (MPAK)Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±10 V Drain current ID 0.2 A Drain peak curren...
2SK2570: Features: ` Low on-resistance RDS(on) = 0. 8typ. (VGS = 4 V, ID = 100 mA)` 2.5V gate drive devices.` Small package (MPAK)Specifications Item Symbol Ratings Unit Drain to source voltage V...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 20 | V |
Gate to source voltage | VGSS | ±10 | V |
Drain current | ID | 0.2 | A |
Drain peak current | ID(pulse)*1 | 0.4 | A |
Channel dissipation | Pch | 150 | mW |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |
* PW 10 s, duty cycle 1 %