Features: • Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100mA)• 2.5V gate drive device.• Small package (MPAK).Application·Low frequency power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 50 V Gate to source voltage ...
2SK2569: Features: • Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100mA)• 2.5V gate drive device.• Small package (MPAK).Application·Low frequency power switchingSpecifications...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 50 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 0.2 | A |
Drain peak current | ID(pulse)* | 0.4 | A |
Channel dissipation | Pch** | 150 | mW |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |
* PW 10 s, duty cycle 1 %