2SK2552B

      The 2SK2552B is designed as N-channel silicon junction field effect transistor for impedance converter of ECM and general-purpose.
      2SK2552B has three features.The first one is that it would have low noise which means 108.5 dB TYP. (Vdd= 2.0 V, C= 5 pF, Rl= 2.2 k).The second one is that it would be especially suitable for audio and telephone.The third one is that it would have small package which means SC-75 (USM).That are all the features.
      Some absolute maximum ratings of 2SK2552B (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 20 V.The second one is about its gate to drain voltage which would be -20 V.The third one is about its drain current which would be 10 mA.The fourth one is about its gate current which would be 10 mA.The fifth one is about its total power dissipation which would be 100 mW.The sixth one is about its junction temperature which would be 125 °C.The last one is about its storage temperature which would be from 55 to +125 °C.Something should be noted that please take care of ESD (Electro Static Discharge) when you handle the device in this document.
      Also there are some electrical characteristics (of 2SK2552B Ta = 25°C) about it.The first one is about its zero gate voltage drain cutoff current which would be min 90 A and typ 200A and max 430A with condition of Vds = 2.0 V, Vgs = 0V.The second one is about its gate cutoff voltage which would be typ -0.37V and max -1.0V with condition of Vds = 2.0 V, Id= 1.0A.The third one is about its forward transfer admittance which would be min 300S and typ 480S with condition of Vds=2.0V, Id=30A, f=1.0MHz and would be min 750S and typ 1300S with condition of Vds=2.0V, Vgs=0V, f=1.0MHz.The fourth onr is about its input capacitance which would be typ 4 pF with condition of Vds= 2.0 V, Vgs= 0 V, f= 1.0 MHz.The fifth one is about its voltage gain which would be typ -1.0 dB with condition of Vdd= 2.0 V, C= 5 pF, Rl= 2.2 k,Vin=10mV, f=1KHz.And so on.For more information please contact us.