MOSFET N-ch 600V 6A 0.9 ohm
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6 A |
Resistance Drain-Source RDS (on) : | 1.25 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-220 |