Features: • Low onresistance RDS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V soueceApplication·High speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX 60 V Gate to source voltage VGSS ...
2SK2529: Features: • Low onresistance RDS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V soueceApplication·High speed power switchingSpecifications ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 50 | A |
Drain peak current | ID(pulse)* | 200 | A |
Bodydrain diode reverse drain current | IDR | 50 | A |
Avalanche current | IAP*** | 45 | A |
Avalanche energy | EAR*** | 174 | mJ |
Channel dissipation | Pch** | 35 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |