Features: SpecificationsDescription The 2SK2521-01 is designed as N-channel MOSFET with typical application of motor control, DC-DC converters and general purpose power amplifier. 2SK2521-01 has five features.The first one is that it would have high current.The second one is that it would have low...
2SK2521-01: Features: SpecificationsDescription The 2SK2521-01 is designed as N-channel MOSFET with typical application of motor control, DC-DC converters and general purpose power amplifier. 2SK2521-01 has fiv...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
The 2SK2521-01 is designed as N-channel MOSFET with typical application of motor control, DC-DC converters and general purpose power amplifier.
2SK2521-01 has five features.The first one is that it would have high current.The second one is that it would have low on-resistance.The third one is that it would have no secondary breakdown.The fourth one is that it would have low driving power.The last one is that it would have avalanche proof.That are all the features.
Some absolute maximum ratings of 2SK2521-01 (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 200V.The second one is about its continuous drain current which would be 18A.The third one is about its pulsed drain current which would be 72A.The fourth one is about its gate-source voltage which would be ±30V.The fifth one is about its drain to gate voltage (Rgs=20KW) which would be 200 V.The sixth one is about its max. power dissipation which would be 50W.The seventh one is about its operating temprrature which would be +150°C.The last one is about its storage temperature range which would be from -55 to +150°C.
Also there are some important electrical characteristics of 2SK2521-01 at Tc = 25°C (unless otherwise specified) about it.The first one is about its drain-source breakdown voltage which would be min 200V with condition of Id=1mA,Vgs=0V.The second one is about its gate threshold voltage which would be min 2.5V and typ 3.0V and max 3.5V with condition of Id=1mA,Vds=Vgs.The third one is about its zero gate voltage drain current which would be typ 10A and max 500A with condition of Tch=25°C and would be typ 0.2mA and max 1.0mA with condition of Tch=125°C.The fourth one is about its gate source leakage current which would be typ 10nA and max 100nA with condition of Vgs=±30V,Vds=0V.The fifth one is about its drain source on-state resistance which would be typ 0.15 and max 0.18 with condition of Id=9A,Vgs=10V.The sixth one is about its forward transcondutance which would be min 4.0S and typ 9.0S with condition of Id=9A,Vds=25V.And so on.For more information please contact us.